The invention relates to the technical field of microelectronic processing and especially to a semiconductor silicon wafer corrosive liquid. The semiconductor silicon wafer corrosive liquid is formed by mixing nitric acid, hydrofluoric acid, and glacial acetic acid according to a volume ratio of 4-14: 4-14: 6-18. A semiconductor silicon wafer is placed in a closed container containing the semiconductor silicon wafer corrosive liquid in order to be corroded on a low-temperature condition. Different corrosion demands are satisfied by regulating the ratio of the nitric acid to the hydrofluoric acid. The corrosion rate and the corrosion depth of the semiconductor silicon wafer, and the surface cleanliness of the corroded semiconductor silicon wafer can be controlled on the low-temperature condition. The corrosion rate at a low-temperature environment is less than that at a normal-temperature environment, so the corrosive uniformity of the semiconductor silicon wafer is easier to control. The semiconductor silicon wafer corrosive liquid is easy to form, attainable in raw material, low in cost, and very suitable for industrial production of semiconductor microelectronics.