The present invention relates to a charge holding-based switching device driving circuit. The charge holding-based switching device driving circuit includes a transformer primary side H bridge and a secondary side secondary driving circuit; the H bridge comprises a first MOS switch tube, a second MOS switch tube, a third MOS switch tube and a fourth MOS switch tube; and the secondary side secondary driving circuit includes a fifth MOS switch tube, a sixth MOS switch tube and a switch. With the charge holding-based switching device driving circuit of the invention adopted, driving loss can be effectively decreased, the efficiency of power and electric power converters can be improved, and therefore, the defects of existing power semiconductor device driving circuit, such as large driving loss and low anti-interference ability, can be eliminated.