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发明公开
CN106129062A 绝缘层的制造方法、阵列基板的制造方法及阵列基板 有权

绝缘层的制造方法、阵列基板的制造方法及阵列基板
摘要：
本发明公开一种绝缘层的制造方法、阵列基板的制造方法及阵列基板，其中绝缘层的制造方法包括步骤：在基板上沉积一绝缘层；对绝缘层进行曝光显影处理，在绝缘层形成第一开口和第二开口，其中第一开口位于绝缘层的第一区域，第二开口位于第二区域；通过光罩对绝缘层的第一区域进行光固化处理；对绝缘层进行高温退火处理。采用本发明的制造方法得到的绝缘层上第一开口处绝缘层不易出现流动变形问题。
摘要（英）：

The invention discloses a manufacturing method of an insulating layer, the manufacturing method of an array substrate and the array substrate. The manufacturing method of the insulating layer comprises the steps as follows: the insulating layer is deposited on a substrate; exposure and development treatment is carried out on the insulating layer; a first opening and a second opening are formed in the insulating layer; the first opening is located in a first region of the insulating layer and the second opening is located in a second region; photocuring treatment is carried out on the first region of the insulating layer through a photomask; and high-temperature annealing treatment is carried out on the insulating layer. According to the insulating layer manufactured by the manufacturing method disclosed by the invention, the insulating layer in the first opening does not easily generate the problem of flowing deformation.

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