This mask blank has: a transparent substrate; a semitransparent layer formed on the transparent substrate; an intermediate layer formed on the semitransparent layer; and a light blocking layer formed on the intermediate layer. The light blocking layer is configured from a single metal material not containing a transition metal, the film thickness of the light blocking layer is equal to or less than 40 nm, and the optical concentration of a laminated body with respect to exposure light is equal to or higher than a value at which the laminated body functions as a light blocking region, said laminated body having laminated therein three kinds of layers, i.e., the semitransparent layer, intermediate layer, and light blocking layer. Consequently, the present invention provides the mask blank to be used for the purpose of manufacturing a half tone-type phase shift mask, which has high light blocking performance even if the thickness of a light blocking pattern film is reduced, and which also has a reduced EMF bias value, and excellent pattern workability, light resistance and chemical resistance, said phase shift mask being suitable for a lithography technology having a half pitch of 40 nm or more on a wafer.