The invention relates to a light-induced nonvolatile magnetic memory which is composed of a light source control module, magnetic tunnel junctions and a reading-writing control circuit. The light source control module is composed of word lines, bit lines and light source dot matrixes, the dot matrixes correspond to magnetic tunnel junction arrays in one to one mode, the state of any point light source of any dot matrix can be controlled through the word lines and the bit lines, and writing in of a single magnetic tunnel junction storage state is completed. The reading-writing control circuit is composed of word lines, bit lines, a transistor, a sensible amplifier and an accessory circuit and performs gating and reading-writing control of a storage unit. Each magnetic tunnel junction comprises a bottom-end electrode, a ferromagnetic reference layer, a tunneling layer I, a photosensitive non-magnetic layer, a tunneling layer II, a ferromagnetic free layer and a top-end electrode which are sequentially and vertically stacked from bottom to top, wherein the ferromagnetic free layer and the ferromagnetic reference layer are changeable in position. The light-induced nonvolatile magnetic memory can achieve data light writing in, reduces tunneling current and power consumption, has nonvolatile properties, reduces the power consumption and delay in the writing in process and reduces the bit error rate while facilitating device miniaturization.