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发明授权
CN106282925B 一种TCO/TiW透明导电薄膜及其制备方法 有权

一种TCO/TiW透明导电薄膜及其制备方法
摘要：
本发明公开了种TCO/TiW透明导电薄膜及其制备方法,利用超薄TiW合金薄膜层作为扩散阻挡层改善TCO薄膜(如掺铟氧化锡(ITO)、掺铝氧化锌(AZO)或掺氟氧化锡(FTO)等三种薄膜)与p‑Si等衬底的接触性能;并且通过TiW合金薄膜层的引入作为金属层,与TCO薄膜形成TCO/TiW双层薄膜,使薄膜的电学性能得到明显改善;TCO/TiW透明导电薄膜在显示器、太阳电池等半导体器件中具有巨大应用前景。种TCO/TiW透明导电薄膜的制备方法,包括:在衬底的表面上沉积TiW合金,形成TiW合金薄膜层/衬底结构;再在所述TiW合金薄膜层的表面上沉积TCO透明导电氧化物,形成TCO薄膜层/TiW合金薄膜层/衬底结构。
摘要（英）：

The invention discloses a TCO/TiW transparent conductive film and a preparing method thereof. An ultrathin TiW alloy film layer is used as a diffusion barrier layer for improving the contact performance between a TCO film (such as indium tin oxide (ITO) film or an aluminum doped zinc oxide (AZO) film or a fluorine doped tin oxide (FTO) film ) and substrates such as p-Si; the TiW alloy film layer is introduced as a metal layer, the TiW alloy film layer and the TCO film form a TCO/TiW dual-layer film, and the electrical performance of the film is obviously improved; the TCO/TiW transparent conductive film has broad application prospects in semiconductor devices such as a displayer and a solar battery. The preparing method of the TCO/TiW transparent conductive film includes the steps that TiW alloy is precipitated on the surface of a substrate, and the TiW alloy film layer/substrate structure is formed; then TCO transparent conductive oxide is precipitated on the surface of the TiW alloy film layer, and the TCO film layer/TiW alloy film layer/substrate structure is formed.

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