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发明公开
CN106298693A 一种高压芯片钝化层的制造方法 无效 - 驳回

一种高压芯片钝化层的制造方法
摘要：
本发明涉及一种高压芯片钝化层的制造方法，包括：制造高压芯片正面；背面减薄加工；制造高压芯片钝化层；制造除背面减薄工艺的高压芯片背面。本发明提供的技术方案在高压芯片制造过程中，将钝化层工艺进行优化，减少芯片的应力，增强钝化层与芯片的粘合，提高钝化层在后续工艺及应用中的可靠性，提高高压芯片的可靠性。
摘要（英）：

The present invention relates to a manufacturing method of the passivation layer of a high-voltage chip. The method includes the following steps that: the front surface of the high-voltage chip is manufactured; back surface thinning processing is carried out; the passivation layer of the high-voltage chip is manufactured; and the back surface of the high-voltage chip, which is thinned, is manufactured. According to the manufacturing method provided by the technical schemes of the invention, the processing of the passivation layer is optimized in the manufacturing process of the high-voltage chip, and therefore, the stress of the chip can be decreased, the adhesion of the passivation layer and the chip can be strengthened, and the reliability of the passivation layer in subsequent processing and application can be improved, and the reliability of the high-voltage chip can be improved.

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