The invention discloses an oriented-growing method of a quantum structure based on a laser direct-writing process. The oriented-growing method comprises a step of etching an etching structure pattern by means of the laser direct-writing process, namely making an exposure light spot for laser direct-writing perform etching in a direction of a photoresist layer for forming a line of exposure light spots, then performing layer-by-layer etching, and finally forming M-line N-row exposure light spots on the photoresist layer, wherein the diameter of the exposure light spot is D and step length of the exposure light spot is d, and furthermore d< D/2. Furthermore, in etching between a j-row to a (j+n-1)-row between an i-line and an (i+m-1)-line, power of the exposure light spots is switched off for forming an unexposed area. The unexposed area forms an etching structure pattern. The length of the etching structure pattern in the line direction is L1, and the length in the row direction is L2. Furthermore L1 and L2 respectively satisfy relationships of L1=(m+1)*d-D, L1=(n+1)*d-D, and values of m and n satisfy a requirement that the value of L1 or L2 is smaller than the diameter D of the exposure light spot.