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CN106486446A 半导体装置的制造方法及半导体装置 无效 - 撤回

半导体装置的制造方法及半导体装置
摘要：
提供一种半导体装置的制造方法及半导体装置，在半导体装置的测试中抑制焊锡接合不良而提高测试的可靠性。半导体装置的制造方法中，准备具有具备第一罩膜(2r)的第一焊盘电极(2aa)和具备第二罩膜(2t)的第二焊盘电极(2ab)的半导体晶圆(1)，而且形成在第一焊盘电极(2aa)上具有第一开口且在第二焊盘电极(2ab)上具有第二开口的聚酰亚胺层(2d)，然后形成经由第二开口与第二焊盘电极(2ab)连接的再配置布线(2e)。接着，以在第一焊盘电极(2aa)及再配置布线(2e)的凸块台(2ac)留下有机反应层(2ka、2kb)的方式在聚酰亚胺层(2f)形成开口，对半导体晶圆(1)实施热处理，然后在再配置布线(2e)上形成凸块。
摘要（英）：

To enhance reliability of a test by suppressing defective bonding of a solder in the test of a semiconductor device, a method of manufacturing the semiconductor device includes: preparing a semiconductor wafer that includes a first pad electrode provided with a first cap film and a second pad electrode provided with a second cap film. Further, a polyimide layer that includes a first opening on the first pad electrode and a second opening on the second pad electrode is formed, and then, a rearrangement wiring that is connected to the second pad electrode via the second opening is formed. Next, an opening is formed in the polyimide layer such that an organic reaction layer remains on each of the first pad electrode and a bump land of the rearrangement wiring, then heat processing is performed on the semiconductor wafer, and then, a bump is formed on the rearrangement wiring.

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