The invention relates to the technical field of semiconductor manufacturing and more particularly to a deep trench power MOS device structure and a method for producing the same. After body ion implantation and a annealing process, a covered P-type ion implantation process is added. A P-type lightly doped region is formed on the upper parts of N-type protection rings and the upper parts of P-type lightly doped epitaxial layers between adjacent N-type protection rings to resist N-type ion contamination in the process so that the isolation at the device periphery may maintain normal operation because of there is not a direct large leakage path, thereby improving the performance of the device.