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发明授权
CN106558494B 半导体器件的形成方法 有权

半导体器件的形成方法
摘要：
一种半导体器件的形成方法，包括：提供基底，所述基底具有相邻的第一区域和第二区域，所述基底表面具有横跨第一区域和第二区域的栅极结构，所述栅极结构的顶部表面覆盖有保护层；形成覆盖第一区域和第二区域的第一阻挡层；去除第二区域保护层表面及基底表面的第一阻挡层，在第二区域的栅极结构侧壁形成第二侧墙；形成所述第二侧墙后，形成覆盖第一区域和第二区域的第二阻挡层；向所述第一阻挡层和第二阻挡层中注入离子；去除第一区域保护层表面及基底表面的离子注入后的第一阻挡层和第二阻挡层，在第一区域的栅极结构侧壁形成第一侧墙。所述方法提高了半导体器件的性能。
摘要（英）：

The invention discloses a method for forming a semiconductor device. The method includes the following steps: providing a substrate which has a first region and a second region which are adjacent to each other, the surface of the substrate having a gate electrode structure to stretch across the first region and the second region, the surface of the top of the gate electrode structure is covered with a protection layer; forming a first blockage layer which covers the first region and the second region; removing the protection layer of the second region and the first blockage layer on the surface of the substrate, forming a second side wall on the side wall of the gate electrode structure of the second region; following the formation of the second side wall, forming a second blockage layer which covers the first region and the second region; injecting ions to the first blockage layer and the second blockage layer; removing the protection surface of the first region and the first blockage layer and the second blockage layer after being injected with ions of the surface of the substrate, forming a first side wall on the side wall of the gate electrode structure of the first region. The method increases the properties of the semiconductor device.

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