The invention relates to a processing method of a phase change memory. The phase change memory comprises a transistor and a phase change memory resistance unit, wherein the drain electrode of the transistor is electrically connected with the phase change memory resistance unit. The method comprises the following steps: S1, applying voltage to the grid electrode of the transistor to conduct the transistor, enabling one end of a phase change material layer at which anions are aggregated in the phase change memory resistance unit to electrically connect with the cathode of a pulse power supply, and enabling one end of the phase change material layer at which cations are aggregated to electrically connect with the anode of the pulse power supply; and S2, applying pulse voltage to recover the cations which are migrated and to restore compositions of the phase change material layer which is subjected to composition segregation to normal. According to the processing method disclosed by the invention, the cations which are migrated can be recovered to repair the compositions of the phase change material layer, and thus the amorphization operation (RESET) of PCRAM succeeds, and the performance of PCRAM can be improved.