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发明公开
CN106656058A 电容交叉耦合与谐波抑制 无效 - 撤回

电容交叉耦合与谐波抑制
摘要：
本发明涉及电容交叉耦合与谐波抑制，其中的功率放大器包括第一级联结构，第一级联结构包括MOSFET和JFET以及电连接在JFET的源极与漏极之间的第一电容器。并联的两个这样的功率放大器形成差分功率放大器。在差分放大器中，第二电容器可以电连接在第二JFET的源极与漏极之间。另一个差分功率放大器包括：电连接在第一MOSFET的栅极与第二MOSFET的源极之间的第一电容器，以及电连接在第二MOSFET的栅极与第一MOSFET的源极之间的第二电容器。这些差分功率放大器中的一些还包括：电连接在JFET的源极与漏极之间的电容器。
摘要（英）：

The relates to capacitive cross-coupling and harmonic rejection. A power amplifier of the present invention comprises a first cascode including a MOSFET and a JFET and a first capacitor electrically connected between the source and the drain of the JFET. Two such power amplifiers in parallel form a differential power amplifier. In the differential amplifier, a second capacitor can be electrically connected between the source and the drain of the second JFET. Another differential power amplifier comprises a first capacitor electrically connected between the gate of the first MOSFET and the source of the second MOSFET, and a second capacitor electrically connected between the gate of the second MOSFET and the source of the first MOSFET. Some of these differential power amplifiers also include capacitors electrically connected between the sources and the drains of the JFETs.

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