The present invention provides a silicon process quantum dot pixel unit circuit, a sensor and a signal collection method. The pixel unit circuit at least comprises a signal reading circuit unit, a quantum dot photoresistor and a MOS capacitor connected in parallel to the quantum dot photoresistor. The signal reading circuit unit comprises 4 MOSFETs consisting of a level reset tube, a signal transmission tube, a source follower, a line selection control output tube. One end of the quantum dot photoresistor supplies a reference level, and the other end of the quantum dot photoresistor is connected with the source of the level reset tube taken as a signal transmission MOSFET. The incident light intensity can change the size of the quantum dot photoresistor so as to change the current flowing through the quantum dot photoresistor. The signal reading circuit performs integration of the current of the quantum dot photoresistor in the exposure time to obtain photovoltage so as to accurately reflect the incident light intensity through the value of the photovoltage.