利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN106847952A 一种Si基三维Ge量子点晶体光伏型近中红外双色探测器 无效 - 驳回

一种Si基三维Ge量子点晶体光伏型近中红外双色探测器
摘要：
本发明涉及一种Si基三维Ge量子点晶体光伏型近中红外双色探测器，所述探测器结构为PIN或NIP结构的光伏型光电二极管结构，其中以三维Ge量子点晶体作为光吸收区。本发明利用三维Ge量子点晶体内的高效基态微带带间跃迁和价带微带子带间跃迁形成强的近红外和中红外波段光吸收，从而同时实现对近中红外波段的高效双色探测，在红外传感技术领域具有广泛的应用前景。
摘要（英）：

The invention relates to a photovoltaic near-infrared and middle-infrared double-color detector for an Si-based three-dimensional Ge quantum dot crystal. The detector structure is a photovoltaic light-emitting diode structure of a PIN or NIP structure, wherein the three-dimensional Ge quantum dot crystal serves as a light absorption region. Strong near-infrared and middle-infrared band light absorption is formed by using efficient ground state micro-strip interband transition and valence band micro-strip sub-band interband transition inside the three-dimensional Ge quantum dot crystal, so that efficient double-color detection for near-infrared and middle-infrared wave bands is realized simultaneously, and the photovoltaic near and middle infrared double-color detector has wide application prospect in the technical field of infrared sensing.

0/0