The invention discloses a high-order surface grating surface-emitting semiconductor laser. The laser comprises a surface metal electrode layer, a ridge waveguide layer, a p-type doped cladding layer, a grating layer, a p-type doped optical confinement layer, a quantum well or quantum dot active area, an n-type doped optical confinement layer and a substrate layer, which are sequentially arranged, wherein a first-order grating is distributed on the grating layer; a high-order surface grating for coupling optical energy resonating along the horizontal direction to the perpendicular direction for output is distributed above the first-order grating in the center of a resonant cavity. The length of the high-order surface grating positioned above the grating layer in the center of the resonant cavity of the laser is (9 to 100) microns. A traveling wave mode in the resonant cavity of the laser is coupled into a radiation mode to realize surface output of laser by the high-order surface grating. The surface output light of the laser is directly coupled with a fiber core of a standard single-mode optical fiber. A segment of central phase shift is introduced into the center of the high-order surface grating, so that the coupling efficiency of the high-order surface grating surface-emitting laser and the standard single-mode optical fiber can exceed 50 percent.