The invention discloses a cleaning solution composition for removing photoresist etching residue. The cleaning solution composition comprises (a) alcohol amine, (b) solvent, (c) water, (d) a phenolic compound and (e) a surfactant. The cleaning solution composition is rich in water and free of fluoride and hydroxylamine, and complex chemical changes caused by hard baking, dry etching, ashing and plasma injection can be rapidly removed to generate crosslinked and hardened photoresist; in addition, the photoresist reside on metal wire, via and metal pad wafers can be removed without attacking the base material (such as metal aluminum, non-metallic silicon oxide and the like) basically; and particularly, a high protection effect is achieved on metal aluminum. The cleaning solution has high application prospect in the field of semiconductor wafer cleaning and the like.