A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer, and includes an anti-ferromagnetic oxide layer formed on any of the at least two ferromagnetic layers. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.