The invention discloses a through silicon via-based high-quality three-dimensional inductor and a manufacturing process thereof. The through silicon via-based high-quality three-dimensional inductor is composed of multiple inductance element units, and input and output ports are located in a metal layer and a re-layout layer; each inductance element unit comprises the metal layer, a ring-shaped through silicon via array and the re-layout layer; an inner circle through silicon via array and an outer circle through silicon via array are arranged on the ring-shaped through silicon via array; and each through silicon via on the inner circle and the outer circle performs connection between the metal layer and the re-layout layer according to design requirements. A bosch process is used for dig a groove in a silicon substrate, and losses of the silicon substrate are reduced. A metal wire is used for connecting the through silicon via arrays in the inner circle and the outer circle in the ring, a larger inductance value can be realized compared with an inductor with a traditional through silicon via structure, the inductance value is enhanced by making full use of the phenomenon that the current flowing of adjacent through silicon via in the inner circle or the outer circle of the ring is the same, the silicon substrate in the ring is dug to reduce the loss, and besides, the occupied area on a chip can be greatly reduced.