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发明公开
CN107093624A 基于柔性衬底的低In组分InGaAsMOSFET器件及制作方法 审中-实审

基于柔性衬底的低In组分InGaAsMOSFET器件及制作方法
摘要：
本发明公开了一种基于柔性衬底的低In组分InGaAs MOSFET器件及制作方法，主要为了解决传统Ⅲ‑V材料的MOSFET只能应用于硬质平面环境，无法应用于柔性及高频环境的问题。其自下而上包括衬底(1)、半导体功能薄膜层(2)、氧化层(3)和金属电极(4)，其中衬底采用聚酰亚胺柔性衬底；半导体功能薄膜层采用由InGaAs、GaAs和InGaAs三层薄膜层构成力学平衡结构功能层。本发明在具有高工作频率的同时，具有良好的延展和弯曲性，可用于包括柔性显示器、柔性电子标签、人工肌肉及生物信号传感器。
摘要（英）：

The invention discloses a low In component InGaAs MOSFET device and a manufacturing method, and mainly aims to solve the problems that a traditional MOSFET of III-V material can only be applied to a hard plane environment and cannot be applied to flexible and high frequency environments. The device consists from bottom to top of a substrate (1), a semiconductor functional thin film layer (2), an oxide layer (3) and a metal electrode (4). The substrate is a polyimide flexible substrate. The semiconductor functional thin film layer is a mechanically balanced structure functional layer constituted by three thin film layers of InGaAs, GaAs and InGaAs. According to the invention, the device has a high working frequency and excellent extension and flexibility, and can be used for flexible displays, a flexible electronic tags, manual muscles and biological signal sensors.

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