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发明公开
CN107112440A 装置的光刻图案化 有权

装置的光刻图案化
摘要：
公开了使装置图案化的方法，其使用具有至少两个含氟聚合物层的抗蚀剂前体结构。第一含氟聚合物层包含第一含氟聚合物材料，其氟含量为至少50％重量并且基本可溶于第一氢氟醚溶剂或第一全氟化溶剂，但相对于第一氢氟醚溶剂和第一全氟化溶剂二者在第二氢氟醚溶剂中溶解度基本较低。第二含氟聚合物层包含第二含氟聚合物材料，其氟含量低于第一含氟聚合物材料并且基本可溶于第一或第二氢氟醚溶剂，但相对于第一和第二氢氟醚溶剂二者在第一全氟化溶剂中溶解度基本较低。
摘要（英）：

A method of patterning a device is disclosed using a resist precursor structure having at least two fluoropolymer layers. A first fluoropolymer layer includes a first fluoropolymer material having a fluorine content of at least 50% by weight and is substantially soluble in a first hydrofluoroether solvent or in a first perfluorinated solvent, but substantially less soluble in a second hydrofluoroether solvent relative to both the first hydrofluoroether and the first perfluorinated solvent. The second fluoropolymer layer includes a second fluoropolymer material having a fluorine content less than that of the first fluoropolymer material and is substantially soluble in the first or second hydrofluoroether solvents, but substantially less soluble in the first perfluorinated solvent relative to both the first and second hydrofluoroether solvents.

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