利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN107256855B 一种熔断器及其制造方法 有权

一种熔断器及其制造方法
摘要：
本发明公开了一种多晶硅熔断器及其制造方法，该多晶硅熔断器包括多晶硅熔断体和两个引出端口，该多晶硅熔断体包括一衬底、第一绝缘层和一多晶硅熔体，衬底上形成有一凹槽，第一绝缘层覆盖在具有凹槽一侧的衬底表面上，多晶硅熔体形成于第一绝缘层上且位于所述凹槽内呈埋入式形态。本发明将多晶硅熔体以埋入的方式放在衬底的凹槽内，使熔体可以和附近其它器件保持足够的安全距离，有效消除传统熔丝熔断后形成颗粒影响旁边器件的可能性，且能够根据实际需要调节多晶硅熔体的关键尺寸，生成工艺对光刻和干刻的要求不高，使用一般的蚀刻机即可实现。
摘要（英）：

The present invention discloses a polysilicon fuse and fabrication method thereof. The polysilicon fuse comprises a polysilicon fuse-link and two leading terminals, the polysilicon fuse-link comprises a substrate, a first insulating layer and a poly silicon melt. The substrate is formed with a groove, which is covered by the first insulating layer. The polysilicon melt is formed on the first insulating layer and is embedded in the groove. Since the polysilicon melt is embedded in the groove of the substrate, the polysilicon melt is separated away from the nearby devices on the substrate by a sufficient safety distance, which effectively reduce or eliminate the effects of the particles generated during the blowing of the polysilicon melt on the nearby devices.

公开/授权文献
0/0