The invention relates to a semiconductor device and a manufacturing method therefor and an electronic apparatus. The manufacturing method comprises the steps of providing a wafer and forming multiple image sensor devices which are isolated mutually on the wafer; forming a coating supporting structure above the wafer and the image sensor devices in an isolation manner so as to form an isolation space between the coating supporting structure and the wafer, and forming a pore structure in the coating supporting structure; coating the coating supporting structure with a drying curing adhesive and filling the pore structure; and spraying the drying curing adhesive in the pore structure to the wafer through an air gun above the pore structure so as to form a protection ring which is arranged around the image sensor devices. By adoption of the method, direct contact between the coating supporting structure (such as a metal filtering net) and the wafer and the image sensor devices can be avoided, the problem of wafer surface defect caused by the technological process can be avoided, and the performance and yield of a CMOS image sensor can be further improved.