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发明公开
CN107534014A 半导体装置、制造方法、固态成像元件和电子设备 有权

半导体装置、制造方法、固态成像元件和电子设备
摘要：
本公开涉及一种进一步提高了可靠性的半导体装置、制造方法、固态成像元件和电子设备。在分别设置于传感器基板的配线层中和信号处理基板的配线层中的层间膜内形成有用于使所述传感器基板和所述信号处理基板彼此电气连接的连接焊盘，所述传感器基板上形成有具有像素的传感器表面，所述信号处理基板对所述传感器基板进行信号处理。然后，在所述传感器基板的层间膜和所述信号处理基板的层间膜之间、在所述传感器基板侧形成的连接焊盘和所述信号处理基板侧的层间膜之间以及在所述信号处理基板侧形成的连接焊盘和在所述传感器基板侧的层间膜之间形成有金属氧化膜。本技术可以适用于例如层叠型CMOS图像传感器。
摘要（英）：

The present disclosure relates to a semiconductor device, a manufacturing method, a solid-state image pickup element, and an electronic apparatus, wherein reliability is further improved. In interlayer films that are respectively provided in a wiring layer of a sensor substrate, in which a sensor surface having pixels is formed, and in a wiring layer of a signal processing substrate that performssignal processing with respect to the sensor substrate, connecting pads for electrically connecting the sensor substrate and the signal processing substrate to each other are formed. Then, metal oxidefilms are formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connecting pads formed on the sensor substrate side, and the interlayer film onthe signal processing substrate side, and between the connecting pads formed on the signal processing substrate side, and the interlayer film on the sensor substrate side. The present art can be applied to, for instance, a laminated CMOS image sensor.

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