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发明授权
CN107539941B 由至少两个接合的结构层形成的MEMS器件及其制造工艺 有权

由至少两个接合的结构层形成的MEMS器件及其制造工艺
摘要：
本公开的实施例涉及一种微机电器件，其具有半导体材料的第一衬底和半导体材料的第二衬底，第二衬底具有由与其一体的凸出部分界定的接合凹部。接合凹部与第一衬底形成封闭腔室。接合结构布置在封闭腔室内并且接合到第一和第二衬底。在第一和第二衬底之间选择的衬底中形成微机电结构。该器件通过以下步骤形成：在第一晶片中形成接合凹部；在所述接合凹部中沉积接合质量体，所述接合质量体具有比所述接合凹部更大的深度；以及接合两个晶片。
摘要（英）：

A microelectromechanical device having a first substrate (330) of semiconductor material and a second substrate (340) of semiconductor material having a bonding recess (331) delimited by projecting portions (334), monolithic therewith. The bonding recess forms a closed cavity (324) with the first substrate. A bonding structure (336) is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure (345) is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

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