The invention discloses a chip-level rotating-modulation MEMS (micro-electromechanical systems) silicon micromechanical gyro and belongs to the field of inertial technologies and MEMS. The chip-levelrotating-modulation MEMS silicon micromechanical gyro comprises a base to support a rotary platform and maintain its rotation and an SOI (silicon on insulator) wafer; the base is composed of glass sheet 1 and first metal electrode 2 and second metal electrode 3 arranged on the upper surface of the glass sheet by sputtering; a micromechanical gyro 4, a wire unit 5, a drive electrode 6, a driving detection electrode 7, a first sensitive detection electrode 8 and a second sensitive detection electrode 9 are formed on a device layer of the SOI silicon wafer; a rotary modulation platform is formedon a base layer. The micromechanical gyro and its rotary modulation platform are integrally formed on different layers of the same SOI wafer, the size of the rotary modulating gyro is greatly decreased, and integrity is improved; compared with original like gyros, the chip-level rotating-modulation MEMS silicon micromechanical gyro is formed into the chip-level rotary modulating micromechanical gyro with the size decreased by about 2 magnitudes.