Mirror arrangement (1) for a lithography exposure apparatus (WSC) comprising a plurality of mirror elements (2a, 2b) adjacently arranged and jointly forming a mirror surface (3) of the mirror arrangement (1). Each mirror element (2a, 2b) comprises a substrate (4a, 4b) and a multilayer arrangement (5a, 5b) on the substrate (4a, 4b). The multilayer arrangement (5a, 5b) includes a reflective layer system (6a, 6b) having a radiation entrance surface (7a, 7b) forming a portion of the mirror surface (3) and a piezoelectric layer (8a, 8b) arranged between the radiation entrance surface (7a, 7b) and the substrate (4a, 4b). Each mirror element (2a, 2b) comprises an electrode arrangement (9a, 9b, 9c) associated with the piezoelectric layer (8a, 8b) for generating an electric field, wherein a layer thickness (tp) of the piezoelectric layer (8a, 8b) can be controlled by the electric field. An interconnection arrangement (10) electrically interconnecting adjacent first and second electrodes (9a, 9b) of adjacent electrode arrangements (9a, 9b, 9c) is provided. According to one formulation the interconnection arrangement (10) generates an interconnection electric field in a gap region (1 1 ) between the first and second electrodes (9a, 9b), wherein the interconnection electric field generates a continuous transition between a first electric field at the first electrode (9a) and a second electric field at the second electrode (9b). According to another formulation an electric resistance (Ri) of the interconnection arrangement (10) in a gap region (11) between the first and second electrodes (9a, 9b) is greater than an electric resistance (Rw) of the first and second electrodes (9a, 9b) and less than an electric resistance (RI) of the piezoelectric layers (8a, 8b) of the adjacent electrode arrangements (9a, 9b, 9c) with the first and second electrodes (9a, 9b).