The invention discloses a lateral IGBT with charge-adjustable field plates. The lateral IGBT comprises a P-type substrate; an N-type drift region and a P-type well on the P-type substrate; a cathode contact region and a first field oxide layer on the P-type well; a P-type anode contact region and a second field oxide layer on the N-type drift region; and a dielectric layer above the first field oxide layer and the second field oxide layer and is characterized in that the surface of the first field oxide layer is provided with a plurality of induced capacitor electrode plates; a plurality of charge-adjustable field plates are arranged on the surface of the second field oxide layer; a plurality of upper charge-adjustable field plates are arranged on the surface of the dielectric layer; eachinduced capacitor electrode plate can be connected with one charge-adjustable field plate or upper charge-adjustable field plate corresponding to the induced capacitor electrode plate one to one through a heavily doped polysilicon or metal interconnection line. The structural device has a uniform electric field distribution in the drift region, a short drift region length required for withstand voltage, a good current capability, and a low conduction loss and switching loss.