The invention discloses a preparation method of a mercury cadmium telluride infrared detector material, which comprises the steps of 1) providing a semiconductor donor substrate, and epitaxially growing a buffer layer on the semiconductor donor substrate; 2) growing a sacrificial layer, and forming an epitaxial thin layer on the sacrificial layer; 3) repeating the step 2) until forming a pluralityof sacrificial layers and a plurality of epitaxial thin layers; 4) bonding a receptor substrate and the outermost epitaxial thin layer, forming a defect layer in the topmost sacrificial layer by using ion implantation, stripping the bonding structure to obtain a flexible substrate containing the receptor substrate, and enabling the residual part after the bonding structure is stripped to serve asa first substrate; 5) removing the sacrificial layer at the surface of the first substrate, stripping the epitaxial thin layers from the first substrate with the sacrificial layer being removed in alayer-by-layer manner by repeatedly adopting the method in the step 4), and acquiring a plurality of flexible substrates containing the epitaxial thin layer and the receptor substrate and a donor substrate with the residual sacrificial layers. The preparation method overcomes defects existing in preparation for the mercury cadmium telluride infrared detector material the prior art.