The invention discloses an amorphous silicon film formation method. The amorphous silicon film formation method comprises the steps of 1, pre-heating a silicon substrate covered with a silicon dioxidelayer; 2, processing a surface of the silicon substrate with plasma; 3, performing gas introduction and pre-heating on a film formation chamber; 4, performing first-time amorphous silicon film formation on the silicon substrate in the film formation chamber; 5, introducing argon into the chamber; 6, performing second-time amorphous silicon film formation in the film formation chamber; 7, introducing the argon into the chamber; 8, performing third-time amorphous silicon formation; 9, introducing the argon into the chamber; and 10, moving the silicon substrate out of the chamber for cooling. Bythe amorphous silicon film formation method, bubbles during film formation can be effectively prevented, meanwhile, the method is relatively high in operability, and amorphous silicon with relativelyhigh planarization degree can be obtained.