The invention provides a CMOS image sensing packaging structure and a manufacturing method therefor, and belongs to the technical field of image sensors. The manufacturing method comprises the steps:fixing a transparent base material on the surface, provided with a microconvex lens, of a first insulating layer, fixing a blocking wafer on the surface of the transparent base material, and carryingout the grinding of the wafer, wherein the transparent base material provides a larger mechanical supporting force for the wafer in the process, so as to enable the wafer to be thinner. The CMOS imagesensing packaging structure has the thinning characteristics. In addition, the second installation region is provided with a protection glue layer, and the protection glue layer can prevent oxygen and steam from entering an internal element and absorb the scattered light. The whole structure is longer in service life, and is better in use effect. Moreover, the transparent base material in a manufacturing process is made in a semiconductor factory, so the cleanness is higher, and the pollution to the structure can be avoided.