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发明公开
CN107947743A 用于NB-IOT技术的射频功率放大器 审中-实审

用于NB-IOT技术的射频功率放大器
摘要：
本发明揭露了一种射频功率放大器，其包括：基板；射频输入端；射频输出端；依次耦接于所述射频输入端和所述射频输出端之间的输入匹配电路、第一级射频功率放大结构、级间匹配电路、第二级射频功率放大结构和输出匹配电路。输入匹配电路、级间匹配电路和输出匹配电路中的电感均是由基板上的传输线形成。无需采用SMD电感，设计简单，降低了成本。
摘要（英）：

The invention disclosures an RF power amplifier comprising a substrate; an RF input end; an RF output end; an input matching circuit, a first-stage RF power amplification structure, an inter-stage matching circuit, a second-stage RF power amplification structure and an output matching circuit are sequentially coupled between the RF input end and the RF output end. Inductors in the input matching circuit, the inter-stage matching circuit and the output matching circuit are formed by transmission lines on the substrate. There is no need to adopt SMD inductors, which is simple in design and reduces cost.

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