The present invention relates to a plasma processing device, comprising: an upper electrode has a plurality of protruding posts which made by conducting material and protruded out of one surface of the upper electrode and connected to a plasma producing source and formed a plurality of circles that around a center, each circle has at least one protruding post, the surface of the upper electrode that has protruding posts is covered with dielectric material, a plurality of gas holes disposed between protruding posts and connected to working gas source; a rotatable lower electrode is made of conducting material and covered with dielectric material which has a carry surface facing the surface of the upper electrode that has protruding posts for carrying workpiece.