The invention relates to an integrated capacitor and a forming method thereof. The method of forming an integrated capacitor on a semiconductor surface on a substrate 210 includes etching a capacitordielectric layer 232 including at least one silicon compound material layer on a bottom plate which is above and electrically isolated from the semiconductor surface to provide at least one defined dielectric feature having sloped dielectric sidewall portion. A dielectric layer is deposited to at least partially fill pits in the sloped dielectric sidewall portion to smooth a surface of the slopeddielectric sidewall portion. The dielectric layer is etched, and a top plate 240a is then formed on top of the dielectric feature.