The invention provides a eutectic bonding method and a semiconductor device. The method comprises the following steps: forming a first bonding material pattern on a surface of a first substrate; forming a second bonding material pattern on the surface of a second substrate; forming a protruding annular component surrounding the first bonding material pattern and/or the second bonding material pattern on the surface of the first substrate and/or the surface of the second substrate, wherein an accommodating space is formed between the annular component and the outer periphery of the first bonding material pattern and/or the second bonding material pattern; and aligning the first bonding material pattern to the second bonding material pattern, and pressing the first substrate and the second substrate at a predetermined pressure and a predetermined temperature, so that the first substrate and the second substrate generate eutectic bonding through the first bonding material pattern and thesecond bonding material pattern. According to the eutectic bonding method provided by the invention, overflows can be blocked.