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发明授权
CN108183090B 一种芯片独立成型的压接式IGBT模块及其制备方法 有权

一种芯片独立成型的压接式IGBT模块及其制备方法
摘要：
一种芯片独立成型的压接式IGBT模块及其制备方法。本发明涉及电气元件制备技术领域，具体涉及大功率压接式IGBT模块封装技术领域。本发明提供的芯片结构，通过对烧结有第一导电平面和第二导电平面的半导体芯片进行绝缘外壳的包裹，能够最大限度的保护半导体芯片，避免环境对芯片的污染和破坏，降低芯片的储存环境要求苛刻度，并将储存、封装过程中有可能对半导体芯片带来损坏的风险降至最低。本发明所提供的芯片结构储存方便，环境宽松，并能够有效提高器件整体可靠性。本发明提供的压接式IGBT模块，接触热阻和接触电阻更低，器件可靠性高，早期失效率低，当其中并联的任一个芯片单元出现问题时，能够轻松进行更替。
摘要（英）：

The invention discloses a crimping-type IGBT module with an independently-formed chip and a manufacturing method thereof, which relate to the technical field of electrical element manufacturing and particularly relate to the technical field of high-power crimping-type IGBT module packaging. According to the chip structure provided in the invention, through carrying out insulated shell coating on the semiconductor chip sintered with a first conductive plane and a second conductive plane, the semiconductor chip can be protected to a maximum degree, the chip can be prevented from being polluted and damaged by the environment, the chip storage environment requirement severity can be reduced, and the risk of possible damages to the semiconductor chip during storage and packaging processes can be reduced to the minimum. The chip structure provided in the invention is convenient to store, the environment is loose, and the whole device reliability can be effectively improved. According to thecrimping-type IGBT module provided in the invention, the thermal contact resistance and the contact resistance are lower, the device reliability is high, the early failure rate is low, and when any parallel chip unit goes wrong, replacement can be carried out easily.

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