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发明公开
CN108231595A 薄膜晶体管及其制备方法、阵列基板、显示装置 有权

薄膜晶体管及其制备方法、阵列基板、显示装置
摘要：
本申请公开了一种薄膜晶体管及其制备方法、阵列基板、显示装置。该薄膜晶体管，包括：遮光图案，第一绝缘层，有源层图案，第二绝缘层，栅极图案，层间绝缘层，与有源层图案分别连接的源极和漏极；源极和漏极还与遮光图案连接。根据本申请实施例的技术方案，通过源极和漏极与遮光图案连接，将遮光图案感生的电荷传导至外部电路，可以排除遮光图案感生电荷的影响，提升阈值电压的稳定性，改善薄膜晶体管的特征。
摘要（英）：

The invention discloses a thin film transistor and a preparation method thereof, an array substrate and a display device. The thin film transistor comprises: a shading pattern, a first insulation layer, an active layer pattern, a second insulation layer, a gate pattern, an interlayer insulation layer and a source and a drain which are connected with the active layer pattern respectively, wherein the source and the drain are also connected with the shading pattern. According to the technical scheme of the embodiment of the invention, by connecting the source and the drain with the shading pattern, electric charges induced by the shading pattern are conducted to an external circuit, the influence of the electric charges induced by the shading pattern can be eliminated, the stability of threshold voltage is enhanced, and the characteristics of the thin film transistor are improved.

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