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Invention Grant
CN108292697B 发光二极管芯片和用于制造发光二极管芯片的方法 有权

发光二极管芯片和用于制造发光二极管芯片的方法
Abstract:
提出一种发光二极管芯片，所述发光二极管芯片具有：外延的半导体层序列(1)，所述半导体层序列具有有源区(2)，所述有源区在运行时产生电磁辐射；和钝化层(10)，在所述钝化层中静力学固定电的载流子，或者所述钝化层引起半导体层序列(1)的表面态的饱和。钝化层(10)施加在半导体层序列(1)的侧面(8)上，并且钝化层(10)至少部分地遮盖有源区(2)。
Abstract(English):

A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

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