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发明公开
CN108376701A 半导体装置 审中-实审

半导体装置
摘要：
本发明期望调整电位梯度的变化，以便不会因电阻膜的电场而在位于电阻膜下的半导体基板产生雪崩。本发明提供半导体装置，该半导体装置具备半导体基板，半导体基板具有：边缘终端部，其包含外缘区域，所述外缘区域在半导体基板的表面的端部设置于预定的深度范围且是杂质区域；以及有源部，其包含阱区，所述阱区在半导体基板的表面的比外缘区域靠内侧的位置设置于预定的深度范围且是导电型与半导体基板的漂移区的导电型不同的杂质区域，半导体装置还具备：绝缘膜，其在半导体基板的表面上，至少设置于外缘区域与阱区之间，且具有锥形部；以及电阻膜，其设置于绝缘膜上，将外缘区域与阱区电连接，绝缘膜的锥形部的锥角为60度以下。
摘要（英）：

The invention is to avoid snow slide generated on a semiconductor substrate below a resistive film due to electric field thereof by adjusting the change of electric potential gradient. The semiconductor device including a semiconductor substrate having an edge termination portion and an active portion is provided. The edge termination portion includes an outer edge region provided on an end portion of a front surface of the semiconductor substrate and within a predetermined depth range. The active portion includes a well region provided on an inner side relative to the outer edge region of thefront surface of the semiconductor substrate and within a predetermined depth range. The semiconductor device further includes an insulating film provided on the front surface of the semiconductor substrate and at least between the outer edge region and the well region and having a taper portion, and a resistive film provided on the insulating film and electrically connected to the outer edge region and the well region. A taper angle of the taper portion of the insulating film is 60 degrees or less.

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