This semiconductor device is provided with a first thin film transistor (101) having a crystalline silicon semiconductor layer (13) and a second thin film transistor (102) having an oxide semiconductor layer (23). First source/drain electrodes (31, 33) of the first thin film transistor (101) are provided on the crystalline silicon semiconductor layer with a first interlayer insulating layer (L1) being interposed therebetween. A second source electrode (25S) of the second thin film transistor (102) is electrically connected to a wiring line (35) that is formed of the same conductive film as the first source/drain electrodes. The wiring line (35) is provided on the second source electrode (25S) with a second interlayer insulating layer (L2) being interposed therebetween, and is in contact with the second source electrode (25S) within a second contact hole that comprises an opening formed in the second interlayer insulating layer (L2). The second source electrode has a multilayer structure including a main layer (25m) and an upper layer (25u) arranged on the main layer; the upper layer (25u) has a first opening below the opening of the second interlayer insulating layer, while the main layer (25m) has a second opening (p2) or a recessed part below the opening of the second interlayer insulating layer; and the second opening (p2) or the recessed part is larger than the first opening (p1) when viewed from the normal direction of a substrate.