The semiconductor device includes a substrate, a first nanowire spaced from the substrate and extended in a first direction, a gate electrode surrounding the first nanowire, extended in a second direction intersecting the first direction, and including a first sidewall and a second sidewall to face each other, a first gate spacer which is formed on the first sidewall of the gate electrode and through which the first nanowire passes, a second gate spacer which is formed on the second sidewall of the gate electrode and through which the first nanowire passes, a source/drain epitaxial layer connected to the first nanowire on at least one side of the gate electrode, and a spacer connector connecting the first gate spacer to the second gate spacer between the first nanowire and the substrate. Accordingly, the present invention can provide the semiconductor device with improved operation characteristics.