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发明授权
CN108615806B 一种N型SnSe热电材料及其制备方法 有权

一种N型SnSe热电材料及其制备方法
摘要：
本发明提供了一种N型SnSe热电材料，属于能源材料技术领域，所述N型SnSe热电材料由Sn、Se和Br原子组成，所述Sn、Se与Br的原子摩尔比为1：0.97～0.99:0.01～0.03；所述N型SnSe热电材料为单晶，所述晶体的晶胞参数abc分别为轴角α、β、γ均为90°；所述N型SnSe热电材料的ZT值为2.0～2.8。本发明得到的N型SnSe热电材料为单晶，消除了晶界和杂质对电子传输的影响，使得电性能得到显著的提高，实现了基于SnSe晶体的热电器件的N型材料部件热电性能的提高。
摘要（英）：

The invention provides an N-type SnSe thermoelectric material, belonging to the technical field of energy materials. The N-type SnSe thermoelectric material is composed of Sn, Se and Br atoms, and anatomic molar ratio of the Sn, Se and Br is 1:0.97-0.99: 0.01-0.03; the N-type SnSe thermoelectric material is monocrystalline, and unit cell parameters abc of a crystal are 11.48346 angstroms, 4.14846angstroms and 4.43524 angstroms respectively, and axial angles alpha, beta and gamma are 90 degrees; and a ZT value of the N-type SnSe thermoelectric material is 2.0 to 2.8. The N-type SnSe thermoelectric material prepared by the invention is monocrystalline, eliminates the influence of grain boundaries and impurities on electron transport, significantly improves the electrical performance, and realizes the improvement of thermoelectric performance of N-type material components of a thermoelectric device based on the SnSe crystals.

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