The invention provides an implementation method of a controllable self-destruction resistive random access memory array. Each resistive random access memory unit in the resistive random access memoryarray has a self-rectifying characteristic and can overcome leakage current of an interleaved memory array, thereby enabling the resistive random access memory to conveniently construct an interleavedmemory array; and meanwhile, built-in rectifying diodes of the resistive random access memory units can be eliminated in a controllable manner through electric pulses, thereby being capable of destroying a normal reading and writing function of the memory array, enabling the constructed resistive random access memory array to have a characteristic of controllable self-destruction, and having an application value in the field of sensitive data storage. Controllable self-destruction resistive random access memory array has the characteristics of self-rectification and self-rectification elimination, and has application prospects in the fields such as micro-nano electronics and data storage.