The invention discloses a light emitting diode, comprising a semiconductor layer sequence having an active layer between a first conductivity type layer and a second conductivity type layer for generating first light of a first peak wavelength, the first conductivity type layer being located on one side of the positive direction of the semiconductor layer sequence, and the second conductivity typelayer being partially exposed; and a wavelength conversion layer arranged in the positive direction and side wall of the semiconductor layer sequence, the wavelength conversion layer absorbing the first light emitted from the semiconductor layer sequence and emitting second light of a second peak wavelength different from the first peak wavelength; wherein a second electrode and the wavelength conversion layer are on the same side of the light emitting diode, and the distance from the second electrode to the side wall of the semiconductor layer sequence is not less than 50 microns, which solves the problem that the side wall of the semiconductor sequence leaks the first light, and improves the uniformity of light emission of the light emitting diode.