Various embodiments relate to methods of dicing wafers and semiconductor chips. A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including atleast one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, the separation regions being freefrom metal; and forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. The method may further include processing a remaining portion of the wafer in the separation region to separate the wafer into individual chips.