The invention discloses a high-efficient continuous F-class power amplifier based on transistor stacking technology. The F-class power amplifier comprises an input fundamental wave matching network, athree-stacked self-bias power amplification network, an efficient continuous F-class output matching network, a grid power supply bias network and a drain power supply bias network. By adopting the three-stacked transistor structure based on the self-bias structure and combining with the efficient continuous F-class output matching network, the circuit has high efficiency, high gain and high power output capacity of the ultra-wide band and has good input-output matching, and the additional stacked grid bias circuit is unnecessary at the same time.