A dicing die bonding sheet (101) which comprises an adhesive layer (12) on a base (11) and a film-like adhesive (13) on the adhesive layer (12), and wherein the adhesive layer (12) has a thickness of 20 μm to 50 μm and an elongation at break of 5-50%. A method for producing a semiconductor chip (9) wherein: an intermediate structure is obtained by providing a first surface (13a) of the film-like adhesive (13) of the dicing die bonding sheet (101) with a semiconductor wafer; and the semiconductor wafer is divided by forming a cut (10) in the intermediate structure, said cut reaching the adhesive layer (12) from the surface of the semiconductor wafer but not reaching the base (11).