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发明公开
CN109023370A 用于铜钼金属膜层的蚀刻液及蚀刻方法 无效 - 撤回

用于铜钼金属膜层的蚀刻液及蚀刻方法
摘要：
本发明提供一种用于铜钼金属膜层的蚀刻液，包括：所述蚀刻液的主要成分包括占蚀刻液总质量百分比为10～15％的过氧化氢、占蚀刻液总质量百分比为3～7％的调节剂、占蚀刻液总质量百分比为1～5％的螯合剂、占蚀刻液总质量百分比为5～15％的缓冲溶液、占蚀刻液总质量百分比为0.5～2％的抑制剂，余量为去离子水；本发明还提供一种用于铜钼金属膜层的蚀刻方法。有益效果：本发明所提供的用于铜钼金属膜层的蚀刻液及蚀刻方法，将含有过氧化氢的蚀刻液在蚀刻前进行紫外灯照射，增强了对铜钼金属膜层的氧化能力，进一步加快了蚀刻反应速率，更进一步提升了蚀刻品质。
摘要（英）：

The invention provides etching liquid for a copper molybdenum metal film layer. The etching liquid comprises the following main components in percentage by mass: 10-15% of hydrogen peroxide, 3-7% of adjusting agent, 1-5% of chelating agent, 5-15% of buffer solution, 0.5-2% of inhibiting agent, and the balance of de-ionized water. The invention further provides an etching method for the copper molybdenum metal film layer. The etching liquid for the copper molybdenum metal film layer and the etching method have the following beneficial effects: the etching liquid containing hydrogen peroxide isirradiated by an ultraviolet lamp before etching, so that the oxidation capacity to the copper molybdenum metal film layer is improved, the etching reaction speed is further accelerated, and the etching quality is further improved.

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