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发明公开
CN109065612A 一种超级结MOSFET结构及其制造方法 无效 - 驳回

一种超级结MOSFET结构及其制造方法
摘要：
本发明公开一种超级结MOSFET结构及其制造方法，该MOSFET结构包括：A型衬底、形成于所述A型衬底上的A型外延层以及形成于所述A型外延层中的B柱，所述A型外延层包括第一A型外延层以及至少一层第二A型外延层，所述B柱包括深槽蚀刻段以及至少一段外延层段，所述第二A型外延层的层数与所述外延层段的段数相对应，所述B柱的深槽蚀刻段采用深槽蚀刻工艺和B型外延工艺形成，所述B柱外延层段采用B型离子注入工艺形成，所述深槽蚀刻段与外延层段采用高温退火工艺连接起来。本发明能降低加工难度和减少加工的步骤，有利于提升加工效率和良品率。
摘要（英）：

A superjunction MOSFET structure and a method for fabricate the same are disclosed, The MOSFET structure includes: A-type substrate, an A-type epitaxial layer formed on the A-type substrate and a B-pillar formed in the A-type epitaxial layer, the A-type epitaxial layer comprises a first A-type epitaxial layer and at least one second A-type epitaxial layer, the B-pillar comprises a deep groove etching section and at least one epitaxial layer section, The number of layers of the second A-type epitaxial layer corresponds to the number of the epitaxial layer segments, the deep groove etching section of the B-pillar is formed by a deep groove etching process and a B-type epitaxial process, the B-pillar epitaxial layer segments are formed by a B-type ion implantation process, and the deep grooveetching section and the epitaxial layer segments are connected by a high-temperature annealing process. The invention can reduce the processing difficulty and the processing steps, and is favorable for improving the processing efficiency and the yield.

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