A semiconductor apparatus includes a semiconductor substrate; a conductive member arranged above the semiconductor substrate and including a polycrystalline silicon layer having a first portion, a second portion, and a third portion that is arranged between the first and second portions in the extension direction of a main surface of the semiconductor substrate; an interlayer insulation film thatcovers the conductive member, a first silicon nitride layer arranged between the interlayer insulation film and the third portion; a second silicon nitride layer arranged between the interlayer insulation film and the first portion and between the interlayer insulation layer and the second portion; a first contact plug and a second contact plug disposed above the first portion and the second portion repsectively and penetrating the interlayer and the second silicon nitride layer to connect to the conductive member, wherein the first silicon nitride layer is disposed between the first and second contact plugs, and apart from the first and second contact plugs. The invention also relates to equipment comprising the semiconductor apparatus.